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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.

SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.

Alpha silicon carbide (?-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 ?C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (?-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 ?C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.

For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices

As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.
This report aims to provide a comprehensive presentation of the global market for SiC Substrates, with both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Substrates. This report contains market size and forecasts of SiC Substrates in global, including the following market information:

• Global SiC Substrates Market Revenue, 2018-2023, 2024-2029, ($ millions)
• Global SiC Substrates Market Sales, 2018-2023, 2024-2029, (K Units)

Global top five SiC Substrates companies in 2022 (%)
The global SiC Substrates market was valued at US$ 583.9 million in 2022 and is projected to reach US$ 1732.9 million by 2029, at a CAGR of 16.8% during the forecast period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.
Global core SiC substrates players include Cree (Wolfspeed), II-VI Advanced Materials and ROHM etc. The top 5 companies hold a share about 56%. North America is the largest market, with a share about 34% in the world, followed by China and Europe with the same share about 26%. and 29%.The major players in China SiC Substrates market include Cree(Wolfspeed) , II?VI Advanced Materials, TankeBlue Semiconductor, etc. The top 3 players hold about 80% of the whole market shares. East China and South China are main markets for SiC Substrates, which hold a share about 80%.
We surveyed the SiC Substrates manufacturers, suppliers, distributors and industry experts on this industry, involving the sales, revenue, demand, price change, product type, recent development and plan, industry trends, drivers, challenges, obstacles, and potential risks.
Total Market by Segment:
Global SiC Substrates Market, by Inch, 2018-2023, 2024-2029 ($ Millions) & (K Units)
Global SiC Substrates Market Segment Percentages, by Inch, 2022 (%)

• 4 Inch
• 6 Inch
• 8 Inch

• Power component
• RF device
• Others

• North America
• US
• Canada
• Mexico
• Europe
• Germany
• France
• U.K.
• Italy
• Russia
• Nordic Countries
• Benelux
• Rest of Europe
• Asia
• China
• Japan
• South Korea
• Southeast Asia
• India
• Rest of Asia
• South America
• Brazil
• Argentina
• Rest of South America
• Middle East & Africa
• Turkey
• Israel
• Saudi Arabia
• UAE
• Rest of Middle East & Africa

• Key companies SiC Substrates revenues in global market, 2018-2023 (Estimated), ($ millions)
• Key companies SiC Substrates revenues share in global market, 2022 (%)
• Key companies SiC Substrates sales in global market, 2018-2023 (Estimated), (K Units)
• Key companies SiC Substrates sales share in global market, 2022 (%)
• Further, the report presents profiles of competitors in the market, key players include:
• Cree (Wolfspeed)
• II-VI Advanced Materials
• TankeBlue Semiconductor
• SICC Materials
• Beijing Cengol Semiconductor
• Showa Denko (NSSMC)
• Hebei Synlight Crystal
• Norstel
• ROHM
• SK Siltron
• Outline of Major Chapters:
• Chapter 1: Introduces the definition of SiC Substrates, market overview.
• Chapter 2: Global SiC Substrates market size in revenue and volume.
• Chapter 3: Detailed analysis of SiC Substrates manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
• Chapter 4: Provides the analysis of various market segments by inch, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
• Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
• Chapter 6: Sales of SiC Substrates in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
• Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
• Chapter 8: Global SiC Substrates capacity by region & country.
• Chapter 9: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
• Chapter 10: Analysis of industrial chain, including the upstream and downstream of the industry.
• Chapter 11: The main points and conclusions of the report.